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APM2518N Arkusz danych(PDF) 4 Page - Sinopower Semiconductor Inc |
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APM2518N Arkusz danych(HTML) 4 Page - Sinopower Semiconductor Inc |
4 / 10 page ![]() www.sinopowersemi.com 4 APM2518NU ® Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - December, 2016 Typical Operating Characteristics Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 T C=25 oC 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 T C=25 oC,V G=10V 0.01 0.1 1 10 100 0.1 1 10 100 400 1s T C=25 OC 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 1 2 Mounted on 1in 2 pad R qJA :50 oC/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 |
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