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Zakładka z wyszukiwarką danych komponentów |
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APM2518N Arkusz danych(PDF) 2 Page - Sinopower Semiconductor Inc |
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APM2518N Arkusz danych(HTML) 2 Page - Sinopower Semiconductor Inc |
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2 / 10 page  www.sinopowersemi.com 2 APM2518NU ® Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - December, 2016 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 25 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 30 A IDP 300μs Pulse Drain Current Tested TC=25°C 120 A TC=100°C 80 ID Continuous Drain Current TC=25°C 50* A TC=100°C 35 PD Maximum Power Dissipation TC=25°C 50 W TC=100°C 20 RqJC Thermal Resistance-Junction to Case 2.5 °C/W RqJA Thermal Resistance-Junction to Ambient 50 °C/W EAS Drain-Source Avalanche Energy, L=0.1mH 33.8 mJ Note *：Current limited by bond wire. APM2518NU Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 25 - - V VDS=20V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.3 1.8 2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=10V, IDS=30A - 8 9.5 RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=15A - 15 20 mW Diode Characteristics VSD a Diode Forward Voltage ISD=15A, VGS=0V - 0.8 1.1 V trr Reverse Recovery Time - 24 - ns Qrr Reverse Recovery Charge IDS=30A, dlSD/dt=100A/ms - 16 - nC Electrical Characteristics (T A=25°C Unless Otherwise Noted) |
Podobny numer części - APM2518N |
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Podobny opis - APM2518N |
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