MJ21195 MJ21196

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

IEBO

—

—

100

µAdc

Collector Cutoff Current

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

ICEX

—

—

100

µAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)

(VCE = 80 Vdc, t = 1 s (non–repetitive)

IS/b

5

2.5

—

—

—

—

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, VCE = 5 Vdc)

hFE

25

8

—

—

75

Base–Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

—

—

2.2

Vdc

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

—

—

—

—

1.4

4

Vdc

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS

hFE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V)

hFE

matched

THD

—

—

0.8

0.08

—

—

%

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

fT

4

—

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

—

—

500

pF

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤2%

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

PNP MJ21195

NPN MJ21196

IC, COLLECTOR CURRENT (AMPS)

0.1

1.0

10

6.5

6.0

5.0

4.0

3.0

2.0

1.0

0

7.5

7.0

6.0

4.0

3.0

5.0

1.0

2.0

0.1

1.0

10

VCE = 10 V

5 V

TJ = 25°C

ftest = 1 MHz

VCE = 5 V

10 V

TJ = 25°C

ftest = 1 MHz

6.5

4.5

3.5

5.5

1.5

2.5

5.5

4.5

3.5

2.5

1.5

0.5