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MJ21195 Arkusz danych(PDF) 3 Page - ON Semiconductor

Numer części MJ21195
Szczegółowy opis  COMPLEMENTARY SILICON POWER TRANSISTORS
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Producent  ONSEMI [ON Semiconductor]
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MJ21195 Arkusz danych(HTML) 3 Page - ON Semiconductor

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MJ21195 MJ21196
3
Motorola Bipolar Power Transistor Device Data
IB = 2 A
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
PNP MJ21195
NPN MJ21196
TYPICAL CHARACTERISTICS
PNP MJ21195
PNP MJ21195
NPN MJ21196
NPN MJ21196
1000
100
10
100
10
1.0
0.1
TJ = 100°C
25
°C
–25
°C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
TJ = 100°C
25
°C
–25
°C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
30
25
20
15
10
5.0
0
5.0
010
15
20
25
30
25
20
15
10
0
5.0
010
15
20
25
5.0
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25°C
TJ = 100°C
25
°C
–25
°C
VCE = 5 V
TJ = 100°C
25
°C
–25
°C
VCE = 5 V
1.5 A
1 A
0.5 A
TJ = 25°C


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