MJ21195 MJ21196

4

Motorola Bipolar Power Transistor Device Data

Figure 9. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a

transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to

greater dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power than can be

handled to values less than the limitations imposed by

second breakdown.

PNP MJ21195

NPN MJ21196

TYPICAL CHARACTERISTICS

PNP MJ21195

NPN MJ21196

3.0

2.5

2.0

1.5

1.0

0.5

0

100

10

1.0

0.1

1.6

1.2

1.0

0.8

0.6

0.4

0

100

10

1.0

0.1

0.2

10

1.0

0.1

100

10

1.0

0.1

10

1.0

0.1

100

10

1.0

0.1

100

10

1.0

0.1

100

10

1.0

1000

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

1.4

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TJ = 25°C

10 ms

50 ms

250 ms

1 sec