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IS25LE01G-RILA3-TY Arkusz danych(PDF) 131 Page - Integrated Silicon Solution, Inc

Numer części IS25LE01G-RILA3-TY
Szczegółowy opis  SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  186 Pages
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Producent  ISSI [Integrated Silicon Solution, Inc]
Strona internetowa  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE01G-RILA3-TY Arkusz danych(HTML) 131 Page - Integrated Silicon Solution, Inc

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IS25LE01G
IS25WE01G
Integrated Silicon Solution, Inc.- www.issi.com
131
Rev. A6
01/14/2025
Figure 8.87 FRDDTR Sequence (BDh [EXTADD=1] or BEh, 4-byte address)
CE #
SCK
IO0
IO1
Instruction = BDh/BEh
CE #
SCK
IO0
IO1
4-byte Address
High Impedance
0
1
2
3
4
5
6
7
8
9
10
...
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Mode 3
Mode 0
tV
30 28 26
0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
4 Dummy Cycles
31 29 27
1
Data Out
...
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
Data Out
Data Out
Data Out
Data Out
Data Out
24 22 20
25 23 21
18
19
7 5
6 4
3 1
2 0
Mode Bits
...
Mode Bits
...
...
...
Notes:
1.
If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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