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R7KA8M2AFDCAM Arkusz danych(PDF) 225 Page - Renesas Technology Corp |
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R7KA8M2AFDCAM Arkusz danych(HTML) 225 Page - Renesas Technology Corp |
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225 / 295 page ![]() USB_DP, USB_DM tHSF tHSR 90% 10% 10% 90% Figure 2.133 USB_DP and USB_DM output timing (high-speed) Observation point USB_DP USB_DM 45 Ω 45 Ω Figure 2.134 Test circuit (high-speed) Table 2.90 USBHS high-speed characteristics (USB_DP and USB_DM pin characteristics) Conditions: USBHS_RREF = 2.2 kΩ ± 1%, USBMCLK = 12/20/24/48 MHz Parameter Symbol Min Typ Max Unit Test conditions Battery Charging Specification D+ sink current IDP_SINK 25 — 175 µA — D- sink current IDM_SINK 25 — 175 µA — DCD source current IDP_SRC 7 — 13 µA — Data detection voltage VDAT_REF 0.25 — 0.4 V — D+ source voltage VDP_SRC 0.5 — 0.7 V Output current = 250 µA D- source voltage VDM_SRC 0.5 — 0.7 V Output current = 250 µA 2.5 ADC Characteristics Table 2.91 A/D conversion characteristics (common) (1 of 3) Conditions: AVCC: 2.7 to 3.63 V, VCC: 2.7 to 3.63 V, VREFH0/VREFH: 2.7 V to AVCC Parameter Min Typ Max Unit Test conditions A/D conversion clock frequency (ADCLK) 25 50 60 MHz AVCC: 2.7 to 3.63 V VCC: 2.7 to 3.63 V VREFH0/VREFH: 2.7 V to AVCC Successive approximation time 100 — 200 ns RA8M2 Datasheet 2. Electrical Characteristics R01DS0438EJ0130 Rev.1.30 Feb 27, 2026 Page 225 of 295 |
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