| Zakładka z wyszukiwarką danych komponentów |
|
ST72C254G2 Arkusz danych(PDF) 113 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ST72C254G2 Arkusz danych(HTML) 113 Page - STMicroelectronics |
|
113 / 135 page ![]() ST72104G, ST72215G, ST72216G, ST72254G 113/135 EMC CHARACTERISTICS (Cont’d) True Open Drain Pin Protection The centralized protection (4) is not involved in the discharge of the ESD stresses applied to true open drain pads due to the fact that a P-Buffer and diode to VDD are not implemented. An additional local protection between the pad and VSS (5a & 5b) is implemented to completly absorb the posi- tive ESD discharge. Multisupply Configuration When several types of ground (VSS,VSSA, ...) and power supply (VDD,VDDA, ...) are available for any reason (better noise immunity...), the structure shown in Figure 76 is implemented to protect the device against ESD. Figure 74. Positive Stress on a True Open Drain Pad vs. VSS Figure 75. Negative Stress on a True Open Drain Pad vs. VDD Figure 76. Multisupply Configuration IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path Path to avoid (5a) (5b) IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path (3b) (3b) VDDA VSSA VDDA VDD VSS BACK TO BACK DIODE BETWEEN GROUNDS VSSA |
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |