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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ST72E331 Arkusz danych(PDF) 102 Page - STMicroelectronics |
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ST72E331 Arkusz danych(HTML) 102 Page - STMicroelectronics |
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102 / 107 page  102/107 ST72E331 ST72T331 8 GENERAL INFORMATION 8.1 EPROM ERASURE EPROM version devices are erased by exposure to high intensity UV light admitted through the transparent window. This exposure discharges the floating gate to its initial state through induced photo current. It is recommended that the EPROM devices be kept out of direct sunlight, since the UV content of sunlight can be sufficient to cause functional fail- ure. Extended exposure to room level fluorescent lighting may also cause erasure. An opaque coating (paint, tape, label, etc...) should be placed over the package window if the product is to be operated under these lighting con- ditions. Covering the window also reduces IDD in power-saving modes due to photo-diode leakage currents. An Ultraviolet source of wave length 2537 Å yield- ing a total integrated dosage of 15 Watt-sec/cm2 is required to erase the device. It will be erased in 15 to 20 minutes if such a UV lamp with a 12mW/cm2 power rating is placed 1 inch from the device win- dow without any interposed filters. |
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