H838532H datasheet(166/508 Pages) RENESAS

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Section 6 ROM

Rev. 1.00 May 30, 2008 Page 146 of 484

REJ09B0436-0100

6.7.3

Memory Read Mode

1. After completion of auto-program/auto-erase/status read operations, a transition is made to the

command wait state. When reading memory contents, a transition to memory read mode must

first be made with a command write, after which the memory contents are read. Once memory

read mode has been entered, consecutive reads can be performed.

2. In memory read mode, command writes can be performed in the same way as in the command

wait state.

3. After powering on, memory read mode is entered.

4. Tables 6.10 to 6.12 show the AC characteristics.

Table 6.10

AC Characteristics in Transition to Memory Read Mode

Conditions: V

CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C

Item

Symbol

Min

Max

Unit

Notes

Command write cycle

nxtc

—

µs

Figure 6.7

CE hold time

ceh

—

CE setup time

ces

—

Data hold time

—

Data setup time

—

Write pulse width

wep

—

WE rise time

—

WE fall time

—

A15

−A0

I/O7

−I/O0

Note: Data is latched on the rising edge of

WE.

tceh

twep

tces

tnxtc

Address stable

tds

tdh

Command write

Memory read mode

Figure 6.7 Timing Waveforms for Memory Read after Memory Write

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