PMBT2222 datasheet(3/8 Pages) NXP

Numer części	PMBT2222

Szczegółowy opis	NPN switching transistors

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3 / 8 page

2004 Jan 22

3

NXP Semiconductors

Product data sheet

NPN switching transistors

PMBT2222; PMBT2222A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

PMBT2222

−

60

V

PMBT2222A

−

75

V

VCEO

collector-emitter voltage

open base

PMBT2222

−

30

V

PMBT2222A

−

40

V

VEBO

emitter-base voltage

open collector

PMBT2222

−

5

V

PMBT2222A

−

6

V

IC

collector current (DC)

−

600

mA

ICM

peak collector current

−

800

mA

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

PMBT2222

IE = 0; VCB = 50 V

−

10

nA

IE = 0; VCB = 50 V; Tj = 125 °C

−

10

µA

collector cut-off current

PMBT2222A

IE = 0; VCB = 60 V

−

10

nA

IE = 0; VCB = 60 V; Tj = 125 °C

−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

PMBT2222A

−

10

nA

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