PMBT2222 datasheet(4/8 Pages) NXP

Numer części	PMBT2222

Szczegółowy opis	NPN switching transistors

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4 / 8 page

2004 Jan 22

4

NXP Semiconductors

Product data sheet

NPN switching transistors

PMBT2222; PMBT2222A

Note

1.

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

hFE

DC current gain

IC = 0.1 mA; VCE = 10 V

35

−

IC = 1 mA; VCE = 10 V

50

−

IC = 10 mA; VCE = 10 V

75

−

IC = 10 mA; VCE = 10 V;

Tamb = −55 °C

35

−

IC = 150 mA; VCE = 10 V

100

300

IC = 150 mA; VCE = 1 V

50

−

DC current gain

IC = 500 mA; VCE = 10 V

PMBT2222

30

−

PMBT2222A

40

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

PMBT2222

−

400

mV

PMBT2222A

−

300

mV

collector-emitter saturation voltage

IC = 500 mA; IB = 50 mA; note 1

PMBT2222

−

1.6

V

PMBT2222A

−

1

V

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

PMBT2222

−

1.3

V

PMBT2222A

0.6

1.2

V

base-emitter saturation voltage

IC = 500 mA; IB = 50 mA; note 1

PMBT2222

−

2.6

V

PMBT2222A

−

2

V

Cc

collector capacitance

IE = Ie = 0; VCB = 10 V; f = 1 MHz

−

8

pF

Ce

emitter capacitance

IC = Ic = 0; VEB = 500 mV; f = 1 MHz

PMBT2222

−

30

pF

PMBT2222A

−

25

pF

fT

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

PMBT2222

250

−

MHz

PMBT2222A

300

−

MHz

F

noise figure

IC = 100 µA; VCE = 5 V; RS = 1 kΩ;

f = 1 kHz

−

4

dB

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA

−

35

ns

td

delay time

−

15

ns

tr

rise time

−

20

ns

toff

turn-off time

−

250

ns

ts

storage time

−

200

ns

tf

fall time

−

60

ns

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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