| Zakładka z wyszukiwarką danych komponentów |
|
STM32F415VG Arkusz danych(PDF) 101 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F415VG Arkusz danych(HTML) 101 Page - STMicroelectronics |
|
101 / 186 page ![]() DocID022063 Rev 4 101/186 STM32F415xx, STM32F417xx Electrical characteristics Low-speed internal (LSI) RC oscillator Figure 34. ACCLSI versus temperature 5.3.10 PLL characteristics The parameters given in Table 35 and Table 36 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 14. 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Based on characterization, not tested in production. 3. Guaranteed by design, not tested in production. Table 34. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Based on characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA MS19013V1 -40 -30 -20 -10 0 10 20 30 40 50 -45 -35 -25 -15 -5 5 152535455565758595 105 Temperat ure (°C) max avg min |
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |