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IRF640A Arkusz danych(PDF) 3 Page - Inchange Semiconductor Company Limited

Numer części IRF640A
Szczegółowy opis  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF640A Arkusz danych(HTML) 3 Page - Inchange Semiconductor Company Limited

  IRF640A Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF640A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
3
isc N-Channel MOSFET Transistor
IRF640A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=9A
0.18
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VDS= 160V; VGS= 0; Tj= 125℃
10
100
μA
VSD
Forward On-Voltage
IS= 18A; VGS= 0
1.5
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
1500
pF
Coss
Output Capacitance
250
pF
Crss
Reverse Transfer Capacitance
110
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=100V,ID=18A
RG=9.1Ω
17
40
ns
Tr
Rise Time
16
40
ns
Td(off)
Turn-off Delay Time
48
110
ns
Tf
Fall Time
24
60
ns
·
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