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STM32F412RE Arkusz danych(PDF) 107 Page - STMicroelectronics |
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STM32F412RE Arkusz danych(HTML) 107 Page - STMicroelectronics |
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107 / 193 page ![]() DocID028087 Rev 4 107/193 STM32F412xE/G Electrical characteristics 161 Low-speed internal (LSI) RC oscillator Figure 32. ACCLSI versus temperature Table 43. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed by characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA |
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