UT4101G-AE2-R
AI

## Technical Overview of UT4101G-AE2-R
The **UT4101G-AE2-R** is a specific P-Channel enhancement mode Field Effect Transistor (MOSFET) manufactured by **UTC (Unisonic Technologies)**. It is designed for high-density cell designs to minimize on-state resistance and provide rugged, reliable performance.
---
### 1. General Specifications
Below are the primary electrical characteristics and physical attributes of the component:
| Parameter | Value / Description |
| :--- | :--- |
| **Component Type** | P-Channel MOSFET |
| **Package Type** | SOT-23-3 (identified by the "AE2" suffix) |
| **Drain-Source Voltage ($V_{DSS}$)** | -20V |
| **Gate-Source Voltage ($V_{GSS}$)** | ±8V |
| **Continuous Drain Current ($I_D$)** | -3.3A |
| **Power Dissipation ($P_D$)** | 1.25W (typical for SOT-23) |
| **Lead-Free Status** | Halogen-Free / RoHS Compliant (identified by "G") |
---
### 2. Key Features
* **Low $R_{DS(ON)}$:** Provides low resistance during conduction, which reduces power loss and heat generation.
* **Low Threshold Voltage:** Operates efficiently even with low gate voltages, making it ideal for portable electronics.
* **Fast Switching:** Optimized for high-speed switching applications.
* **Small Footprint:** The SOT-23 package is suited for space-constrained surface mount (SMT) designs.
---
### 3. Pin Configuration
For the SOT-23 package (AE2), the pinout is typically standardized as follows:
| Pin Number | Name | Function |
| :--- | :--- | :--- |
| 1 | **G** | Gate (Controls the transistor) |
| 2 | **S** | Source (Input current) |
| 3 | **D** | Drain (Output current) |
---
### 4. Part Number Breakdown
Understanding the nomenclature helps in identifying variants:
* **UT4101**: Model series number.
* **G**: Halogen-free and Lead-free material.
* **AE2**: SOT-23-3 Package type.
* **R**: Tape and Reel packaging (standard for automated assembly).
---
### 5. Common Applications
Due to its low voltage and P-channel nature, this part is frequently used in:
* **Power Management:** Load switches in battery-powered devices.
* **DC-DC Converters:** Small-scale buck or boost regulation.
* **Logic Level Shifting:** Interfacing different voltage rails.
* **Battery Protection:** Circuits requiring reverse polarity protection or disconnect functionality.
---
- ⤷What are the equivalent alternative parts for the UT4101G-AE2-R?
- ⤷ What is the maximum $R_{DS(ON)}$ value at -2.5V gate voltage?
- ⤷ Can this MOSFET be used for high-side switching in a 5V circuit?