# WFF4N60 N-Channel Power MOSFET

## Features
· RDS(on) (Max 2.5 Ω) @VGS=10V
· Typical Gate Charge: 15nC
· High ruggedness & Improved dv/dt capability
· 100% Avalanche Tested
· Maximum Junction Temperature: 150°C

## Absolute Maximum Ratings
· Drain to Source Voltage (VDSS): 600V
· Continuous Drain Current (TC=25°C): 4.0A
· Continuous Drain Current (TC=100°C): 2.5A
· Pulsed Drain Current: 16A
· Gate to Source Voltage (VGS): ±30V
· Single Pulsed Avalanche Energy: 240mJ

## Thermal Characteristics
· Thermal Resistance, Junction-to-Case (RθJC): 3.79 °C/W
· Thermal Resistance, Junction-to-Ambient (RθJA): 62.5 °C/W

## Electrical Characteristics (TC = 25°C)
· Drain-Source Breakdown Voltage (BVDSS): 600V
· Gate Threshold Voltage (VGS(th)): 2.0 - 4.0V
· Static Drain-Source On-State Resistance (RDS(ON)): 2.0 - 2.5 Ω @ VGS = 10V, ID = 2.0A
· Input Capacitance (Ciss): 545-710 pF
· Output Capacitance (Coss): 60-80 pF

## Package Information
· Package Type: TO-220F