●

●

●

▲

◀

●

●

●

▲

◀

Symbol

Parameter

Value

Units

Drain to Source Voltage

600

V

4.0*

A

2.5*

A

Drain Current Pulsed

(Note 1)

16*

A

Gate to Source Voltage

V

Single Pulsed Avalanche Energy

(Note 2)

240

mJ

Repetitive Avalanche Energy

(Note 1)

10

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

33

W

Derating Factor above 25 °C

0.26

W/°C

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

Thermal Resistance, Junction-to-Case

-

-

3.79

°C/W

Thermal Resistance, Junction-to-Ambient

-

-

62.5

°C/W

WFF4N60

Features

■

■

Gate Charge (Typical 15nC)

■

Improved dv/dt Capability, High Ruggedness

■

100% Avalanche Tested

■

Maximum Junction Temperature Range (150°C)

General Description

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge topology.

N-Channel MOSFET

Copyright@Wisdom Semiconductor Inc., All rights reserved.

Symbol

2. Drain

3. Source

1. Gate

TO-220F

1 2

3