BD201F / Inchange Semiconductor Company Limited

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Part No.	BD201F
Manufacturer	ISC
Size	112 Kbytes
Pages	2 pages
Description	isc Silicon NPN Power Transistor

Datasheet Summary with AI

# BD201F/203F NPN Power Transistor

## Description

· Complement to Type BD202F/204F
· Designed for hi-fi equipment (15-15W into 4Ω or 8Ω load)
· V(BR)CEO = 45V (BD201F) / 60V (BD203F)

## Absolute Maximum Ratings (Ta=25℃)

· VCBO: 60V
· VCEO: 45V (BD201F) / 60V (BD203F)
· VEBO: 5V
· IC (Continuous): 8A (BD201F) / 12A (BD203F)
· ICM (Peak): 12A
· IB: 3A
· PC (@ TC=25℃): 32W
· TJ: 150℃
· Tstg: -65~150℃

## Thermal Characteristics

· Rth j-c: 6.3 ℃/W

## Electrical Characteristics (TC=25℃)

· V(BR)CEO: 45V (BD201F) / 60V (BD203F)
· V(BR)CBO: 60V
· V(BR)EBO: 5V
· VCE(sat): 1.0V (BD201F, IC=3A, IB=0.3A) / 1.5V (BD201F, IC=6A, IB=0.6A)
· VBE(sat): 2.0V (IC=6A, IB=0.6A)
· VBE(on): 1.5V (IC=3A, VCE=2V)
· ICEO: 0.2mA (VCE=30V, IB=0)
· ICBO: 0.1mA (VCB=1/2VCBO, IE=0, TJ=150℃)
· IEBO: 0.5mA (VEB=5V, IC=0)
· hFE-1 (DC Current Gain): 30 (BD201F, IC=3A, VCE=2V) /
- hFE-2 (DC Current Gain): 30 (IC=1A, VCE=2V)
· fT (Current-Gain—Bandwidth Product): 7.0 MHz (IC=0.3A, VCE=3V, ftest=1.0MHz)
· ton (Turn-On Time): 1 μs
· toff (Turn-Off Time): 4 μs