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BD201F Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części BD201F
Szczegółowy opis  isc Silicon NPN Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD201F Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD201F/203F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
BD201F
45
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD203F
IC= 0.2A ;IB= 0
B
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA ;IE= 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
B
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
B
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 2V
1.5
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
B
0.2
mA
ICBO
Collector Cutoff Current
VCB= VCBO;IE= 0
VCB=
1/
2VCBO;IE= 0; T
J= 150℃
0.1
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
0.5
mA
BD201F
IC= 3A ; VCE= 2V
hFE-1
DC Current Gain
BD203F
IC= 2A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
30
fT
Current-Gain—Bandwidth Product
IC= 0.3A ; VCE= 3V, ftest= 1.0MHz
7.0
MHz
Switching Times
ton
Turn-On Time
1
μs
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
4
μs
isc Website：www.iscsemi.cn
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