Okay, here's a summary of the information extracted from the provided text, which appears to be an excerpt from a datasheet for the BUZ21 power MOSFET.

Device: BUZ21 Power MOSFET

Key Absolute Maximum Ratings:

️· Drain-Source Breakdown Voltage (VDS): 100V
️· Drain-Gate Voltage (VDS): 100V
️· Continuous Drain Current (ID) @ TC = 55°C: 19A
️· Pulsed Drain Current (IDM): 75A
️· Gate-Source Voltage (VGS): ±20V
️· Maximum Power Dissipation (PD): 75W
️· Single Pulse Avalanche Energy (EAS): 230mJ
️· Operating and Storage Temperature Range (TJ,TSTG): -55°C to 150°C
️· Soldering Temperature (TL): 300°C
️· Package Body Solder Temperature (See Techbrief 34): 260°C

Additional Notes:

️· The datasheet references a "Techbrief 34" for more details regarding package body solder temperatures.

️· The continuous drain current is specified with a case temperature of 55°C.
️· The "Linear Derating Factor" is 0.6 W/°C, likely referring to power dissipation limits with increasing temperature.



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