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BUZ21 Arkusz danych(PDF) 2 Page - Intersil Corporation

Numer części BUZ21
Szczegółowy opis  19A, 100V, 0.100 Ohm, N-Channel Power MOSFET
PDF  6 Pages
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

BUZ21 Arkusz danych(HTML) 2 Page - Intersil Corporation

  BUZ21 Datasheet HTML 1Page - Intersil Corporation BUZ21 Datasheet HTML 2Page - Intersil Corporation BUZ21 Datasheet HTML 3Page - Intersil Corporation BUZ21 Datasheet HTML 4Page - Intersil Corporation BUZ21 Datasheet HTML 5Page - Intersil Corporation BUZ21 Datasheet HTML 6Page - Intersil Corporation  
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2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
BUZ21
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current, TC = 55
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
19
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
75
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
75
W
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
230
mJ
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
100
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
IDSS
TJ = 25
oC, V
DS = 100V, VGS = 0V
-
20
250
µA
TJ = 125
oC, V
DS = 100V, VGS = 0V
-
100
1000
µA
Gate to Source Leakage Current
IGSS
VGS = 20V, VDS = 0V
-
10
100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 9A, VGS = 10V (Figure 8)
-
0.09
0.1
Ω
Forward Transconductance (Note 2)
gfs
VDS = 25V, ID = 9A (Figure 11)
4
8
-
S
Turn-On Delay Time
td(ON)
VCC = 30V, ID ≈ 3A, VGS = 10V, RGS =50Ω, RL
= 10
Ω. (Figures 16, 17)
-3045
ns
Rise Time
tr
-5075
ns
Turn-Off Delay Time
td(OFF)
-
170
220
ns
Fall Time
tf
-
80
110
ns
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
1500
2000
pF
Output Capacitance
COSS
-
450
700
pF
Reverse Transfer Capacitance
CRSS
-
150
240
pF
Thermal Resistance Junction to Case
RθJC
≤ 1.67
oC/W
Thermal Resistance Junction to Ambient
RθJA
≤ 75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
TC = 25
oC-
-
19
A
Pulsed Source to Drain Current
ISDM
TC = 25
oC-
-
75
A
Source to Drain Diode Voltage
VSD
TJ = 25
oC, I
SD = 38A, VGS = 0V
-
1.5
2.1
V
Reverse Recovery Time
trr
TJ = 25
oC, I
SD = 19A, dISD/dt = 100A/µs,
VR = 30V
-
200
-
ns
Reverse Recovery Charge
QRR
-
0.25
-
µC
NOTES:
2. Pulse Test: Pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25
oC, L = 440µH, RG = 50Ω, IPEAK = 28A. (See Figures 14 and 15).
BUZ21



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