# QPD1014

## GaN RF Input-Matched Transistor

General Description
The QPD1014 is a 15W (P3dB), 50Ω input-matched GaN on SiC HEMT operating from 30MHz to 1200MHz on a 50V supply rail. It is suitable for basestation, radar and communications applications and supports both CW and pulsed modes. It's housed in a 6x5mm surface mount DFN package.

Features
️· Frequency: 30 to 1200 MHz
️· Output Power (P3dB): 12.5 W
️· Linear Gain: 18.4 dB
️· Typical PAE3dB: 69.5%
️· Operating Voltage: 50 V
️· Low thermal resistance package
️· CW and Pulse capable
️· Package: 6 x 5 mm

Absolute Maximum Ratings
️· Breakdown Voltage: +145 V
️· Gate Voltage Range: -8 to +2 V
️· Drain Current: 1 A
️· RF Input Power: +31 dBm
️· Channel Temperature: 275 °C
️· Storage Temperature: -40 to +150 °C

Recommended Operating Conditions
️· Operating Temp: -40 to +85 °C
️· Drain Voltage: +12 to +55 V
️· Drain Bias Current: 25 mA
️· Channel Temperature: 250 °C

RF Performance (Typical)
️· Linear Gain: 18.4 dB @ 1 GHz
️· P3dB: 12.5 W @ 1 GHz
️· PAE3dB: 69.5% @ 1 GHz
️· Mismatch Ruggedness: 10:1 VSWR @ 1000 MHz

Package Information
️· Type: 8-Pin DFN (6x5x0.85mm)
️· Pinout: Refer to datasheet for detailed pin assignments.

Thermal Resistance
️· 9.0 °C/W (at 3W power dissipation)