350-5000 Datasheet(PDF) - NX6352GP - California Eastern Labs

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350-5000 Arkusz danych, PDF

: ALL 3M Electronics(1)AAEON Technology(1)Aavid, Thermal Division of Boyd Corporation(1)Advanced Power Electronics Corp.(1)Advanced Semiconductor Business Inc.(2)Advantech Co., Ltd.(3)Alcoa international inc.(1)Altech corporation(1)Altera Corporation(1)American Zettler, Inc.(3)Analog Devices(25)Anderson Power Products, Inc.(4)API Technologies Corp(14)Artesyn Technologies(8)Astec America, Inc(5)ATMEL Corporation(1)AVAGO TECHNOLOGIES LIMITED(1)AZ Displays(1)Bel Fuse Inc.(2)BRIGHT LED ELECTRONICS CORP(4)Broadband TelCom Power, Inc.(1)Broadcom Corporation.(1)C&D Technologies(2)California Eastern Labs(5)Central Semiconductor Corp(2)Chenmko Enterprise Co. Ltd.(5)Cherry Semiconductor Corporation(1)CINCON ELECTRONICS Corporation(2)Cisco Systems, Inc.(1)Communications & Power Industries, Inc.(2)Cornell Dubilier Electronics(1)COSMO Electronics Corporation(21)Cree, Inc(7)CUI INC(1)DB Lectro Inc(1)Dc Components(1)DOMINANT Semiconductors(3)DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD(1)E-CMOS Corporation(2)EDAC, All Rights Reserved.(2)Elantec Semiconductor(1)EPCOS(1)
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Szukane słowo kluczowe : '350-5000' - wyników: 5 (1/1) Pages

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NX6352GP	1Mb/6P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
	PS7113L-2A-A	209Kb/14P	6, 8-PIN DIP, 100 V BREAK DOWN VOLTAGE 350 mA CONTINUOUS LOAD CURRENT 1-ch, 2-ch Optical Coupled MOS FET
	PS7113-1A	209Kb/14P	6, 8-PIN DIP, 100 V BREAK DOWN VOLTAGE 350 mA CONTINUOUS LOAD CURRENT 1-ch, 2-ch Optical Coupled MOS FET
	NX6353EP	714Kb/6P	1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
	NX6351GP	938Kb/6P	1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION

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