NX6352GP Arkusz danych(PDF) - California Eastern Labs

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NX6352GP Arkusz danych (PDF) - California Eastern Labs

NX6352GP Datasheet PDF - California Eastern Labs


Numer części	NX6352GP

Pobierz	NX6352GP Pobierz

Rozmiar pliku	1053.35 Kbytes

Page	6 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis

LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

NX6352GP Datasheet (PDF)

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Pobierz Arkusz danych

NX6352GP Datasheet PDF - California Eastern Labs


Numer części	NX6352GP

Pobierz	NX6352GP Click to download

Rozmiar pliku	1053.35 Kbytes

Page	6 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

NX6352GP Arkusz danych (HTML) - California Eastern Labs

NX6352GP Datasheet HTML 1Page - California Eastern Labs

NX6352GP Datasheet HTML 2Page - California Eastern Labs

NX6352GP Datasheet HTML 3Page - California Eastern Labs

NX6352GP Datasheet HTML 4Page - California Eastern Labs

NX6352GP Datasheet HTML 5Page - California Eastern Labs

NX6352GP Datasheet HTML 6Page - California Eastern Labs

Podobny numer części - NX6352GP

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	NX6352GP	853Kb / 7P	LASER DIODE Feb 25, 2013
	NX6352GP27	853Kb / 7P	LASER DIODE Feb 25, 2013
	NX6352GP29	853Kb / 7P	LASER DIODE Feb 25, 2013
	NX6352GP31	853Kb / 7P	LASER DIODE Feb 25, 2013
	NX6352GP33	853Kb / 7P	LASER DIODE Feb 25, 2013

Podobny opis - NX6352GP

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NX6353EP	714Kb / 6P	1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
	NX6350GP	903Kb / 6P	1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
	NX6351GP	938Kb / 6P	1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
	NX6350EP	1,013Kb / 6P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
Renesas Technology Corp	NX6314EH	205Kb / 7P	LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
	NX6350EP	138Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
	NX6350GP	129Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
	NX6351GP	266Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
	NX6352GP	286Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
	NX6353EP	247Kb / 7P	LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

O California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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