1200 V SIC SILICON CARBIDE Datasheet(PDF) - IMW120R007M1H

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	IMW120R007M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Revision 1.00 2022-01-31
	IMW120R040M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Revision 1.00 2022-01-31
	IMW120R014M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Revision 1.00 2022-01-31
	IMW120R020M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Revision 1.00 2022-01-31
ON Semiconductor	NTBG014N120M3P	149Kb/6P	Silicon Carbide (SiC) MOSFET ??14mohm, 1200V, M3, D2PAK-7L March, 2022 ??Rev. 0
	NTC160N120SC1	171Kb/8P	Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, Bare Die April, 2022 - Rev. 1
	NXH80B120MNQ0SNG	679Kb/13P	Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V + 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package February, 2023 - Rev. P2
	NXH40B120MNQ0SNG	645Kb/13P	Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package February, 2023 - Rev. 2
	NXH40B120MNQ1SNG	923Kb/12P	Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package February, 2023 - Rev. P2
	NXH008T120M3F2PTHG	1Mb/16P	Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package August, 2023 - Rev. P1
	NXH011F120M3F2PTHG	518Kb/12P	Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package November, 2023 - Rev. P1
Infineon Technologies A...	IMZA120R020M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Revision 1.00 2022-01-31
Infineon Technologies A...	IMZA120R040M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Revision 1.00 2022-01-31
ON Semiconductor	NXH007F120M3F2PTHG	502Kb/11P	Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package November, 2023 - Rev. P1
Infineon Technologies A...	IMZA120R007M1H	1Mb/16P	CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Revision 1.00 2022-01-31
Infineon Technologies A...	IMZA120R014M1H	1Mb/17P	CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Revision 1.00 2022-01-31
ON Semiconductor	FFSD08120A	415Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L January, 2023 - Rev. 4
ON Semiconductor	FFSD10120A	399Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L January, 2023 - Rev. 4
Alpha & Omega Semicondu...	AOK033V120X2	829Kb/9P	1200 V αSiC Silicon Carbide Power MOSFET Rev. 1.0 June 2021
STMicroelectronics	STPSC2H12	468Kb/10P	1200 V power Schottky silicon carbide diode January 2017 Rev 1

1200 V SIC SILICON CARBIDE Arkusz danych, PDF

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