1200 Datasheet(PDF) - NTBG020N120SC1

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	NTBG020N120SC1	368Kb/7P	MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm June, 2020 ??Rev. 1
	NVXK2KR80WDT	1Mb/9P	SiC Power MOSFET Module 1200 V, 80 m, 20 A Vienna Rectifier Power Module July 2022 - Rev. 1
	NVXK2TR80WDT	662Kb/7P	SiC Power MOSFET Module 1200 V, 80 m, 20 A H-Bridge Power Module July 2022 - Rev. 1
	NVVR26A120M1WST	476Kb/12P	Automotive 1200 V, 2.6 m N-Channel MOSFET, 400 A Half-Bridge Power Module February, 2023 - Rev. 2
	NDSH40120C-F155	295Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-2L November, 2023 - Rev. 0
	NTBG160N120SC1	245Kb/8P	MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 m, 19.5 A February, 2020 ??Rev. 0
	NDSH20120C-F155	292Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L November, 2023 - Rev. 0
	NDSH20120CDN	290Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L November, 2023 - Rev. 0
	NDSH30120C-F155	321Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L November, 2023 - Rev. 0
	NDSH40120CDN	211Kb/6P	Silicon Carbide (SiC) Schottky Diode 40 A, 1200 V, D3, TO-247-3L NDSH40120CDN test August, 2022 - Rev. 0
	NXH008T120M3F2PTHG	1Mb/16P	Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package August, 2023 - Rev. P1
	NVG450A120L5DSC	279Kb/11P	Automotive 1200 V, 450 A Dual Side Cooling Half-Bridge Power Module VE-Trac Dual December, 2021-Rev. 1
	NTBG022N120M3S	227Kb/9P	MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A March, 2022 ??Rev. 0
	NVBG022N120M3S	232Kb/9P	MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A March, 2022 ??Rev. 0
	NVG450A120L5DSC	316Kb/11P	Automotive 1200 V, 450 A Dual Side Cooling Half-Bridge Power Module VE-Trac Dual NVG450A120L5DSC August, 2022 - Rev. 2
	NXH007F120M3F2PTHG	502Kb/11P	Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package November, 2023 - Rev. P1
	NXH011F120M3F2PTHG	518Kb/12P	Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package November, 2023 - Rev. P1
	NXH010P120MNF1PTNG	1Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package February, 2023 - Rev. P4
	NXH040F120MNF1PTG	1Mb/13P	Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package February, 2023 - Rev. P2
	FGHL40T120RWD	449Kb/9P	IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.5 V, 40 A June, 2023 - Rev. 0

1200 Arkusz danych, PDF

Link URL :