1200 Datasheet(PDF) - A2U12M12W2-F2

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	A2U12M12W2-F2	482Kb/15P	ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC February 2022 Rev 2
	STH13N120K5-2AG	584Kb/15P	Automotive-grade N-channel 1200 V, 0.62 typ., 12 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package June 2020 Rev 5
	SCTW100N120G2AG	217Kb/11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package Rev 4 - July 2020
	A1P35S12M3-F	949Kb/16P	ACEPACKTM 1 sixpack topology, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC November 2018 Rev 5
	A1P35S12M3	797Kb/15P	ACEPACKTM 1 sixpack topology, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC November 2018 Rev 5
	SCT10N120AG	238Kb/14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Rev 3 - September 2022
	A1P25S12M3-F	960Kb/16P	ACEPACKTM 1 sixpack topology, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC November 2018 Rev 5
	A1P25S12M3	806Kb/15P	ACEPACKTM 1 sixpack topology, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC November 2018 Rev 4
	SCTW60N120G2AG	197Kb/11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package Rev 1 - May 2020
	STP6N120K3	798Kb/17P	N-channel 1200 V, 1.95 廓 typ., 6 A SuperMESH3??Power MOSFET in TO-3PF, TO-220 and TO-247 packages
	STFW6N120K3	798Kb/17P	N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages
	A1C15S12M3-F	963Kb/20P	ACEPACKTM 1 converter inverter brake, 1200 V, 15 A, trench gate field‑stop M series IGBT with soft diode and NTC November 2018 Rev 7
	SCT20N120AG	487Kb/13P	Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package Rev 3 - October 2019
	A2C25S12M3	948Kb/18P	ACEPACK 2 converter inverter brake, 1200 V, 25 A, trench gate field‑stop M series IGBT with soft diode and NTC April 2019 Rev 4
	A2C35S12M3-F	1Mb/19P	ACEPACKTM 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC January 2019 Rev 4
	A2C35S12M3	968Kb/18P	ACEPACK 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC April 2019 Rev 6
	SCTW40N120G2VAG	210Kb/12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package Rev 3 - November 2020
	A1C15S12M3	823Kb/19P	ACEPACKTM 1 converter inverter brake, 1200 V, 15 A, trench gate field‑stop M series IGBT with soft diode and NTC October 2018 Rev 7
	SCTH100N120G2-AG	439Kb/14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package Rev 2 - July 2020
	SCTH40N120G2V7AG	606Kb/14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package DS12969 - Rev 1 - April 2019

1200 Arkusz danych, PDF

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