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LM6911 Arkusz danych (PDF) Download - Shanghai Leiditech Electronic Technology Co., Ltd

Numer części	LM6911

Szczegółowy opis	These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

Rozmiar pliku	1479.4 Kbytes

Html View	1 2 3 4 5

Producent	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Strona internetowa	http://www.leiditech.com

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LM6911 Arkusz danych (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

Podobny numer części - LM6911

Producent	Numer części	Arkusz danych	Szczegółowy opis
Seoul Semiconductor	LM691	376Kb / 14P	INFRARED LAMP LED
	LM691	360Kb / 13P	CYAN LAMP LED
	LM691	392Kb / 14P	RED OVAL LAMP LED
	LM691	392Kb / 14P	RED OVAL LAMP LED
	LM691	378Kb / 14P	RED LAMP LED

Podobny opis - LM6911

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FQD6N50C	687Kb / 9P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
Stanson Technology	STP4403	321Kb / 6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP4931	334Kb / 6P	STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9235	331Kb / 6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9434	314Kb / 6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Fairchild Semiconductor	FDPF10N60NZ	439Kb / 10P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.
Shenzhen Huazhimei Semi...	HM603BK	938Kb / 8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
Shenzhen Huazhimei Semi...	HM609BK	2Mb / 8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
SHIKUES Electronics	SDW2065	963Kb / 5P	These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology.
SHIKUES Electronics	SDW3045	1,003Kb / 5P	N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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