PXAC210552FC Arkusz danych(PDF) - Cree, Inc

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PXAC210552FC Arkusz danych (PDF) - Cree, Inc

PXAC210552FC Datasheet PDF - Cree, Inc


Numer części	PXAC210552FC

Pobierz	PXAC210552FC Pobierz

Rozmiar pliku	600.35 Kbytes

Page	10 Pages

Producent	CREE [Cree, Inc]

Strona internetowa	http://www.cree.com/

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Szczegółowy opis

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

PXAC210552FC Datasheet (PDF)

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Pobierz Arkusz danych

PXAC210552FC Datasheet PDF - Cree, Inc


Numer części	PXAC210552FC

Pobierz	PXAC210552FC Click to download

Rozmiar pliku	600.35 Kbytes

Page	10 Pages

Producent	CREE [Cree, Inc]

Strona internetowa	http://www.cree.com/

Logo

Szczegółowy opis	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz

PXAC210552FC Arkusz danych (HTML) - Cree, Inc

PXAC210552FC Datasheet HTML 1Page - Cree, Inc

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PXAC210552FC Datasheet HTML 10Page - Cree, Inc

Podobny numer części - PXAC210552FC

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	PXAC210552FC	206Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04
WOLFSPEED, INC.	PXAC210552FC	702Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	PXAC210552FC-V1-R0	702Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	PXAC210552FC-V1-R2	702Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28

Podobny opis - PXAC210552FC

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAC200902FC	489Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11
	PXAC210552FC	206Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04
	PXAC210552MD	466Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25
	PXAC210552ND	466Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09
Cree, Inc	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PTAC210802FC	719Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz
	PXAC200902FC	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
WOLFSPEED, INC.	PXAC210552FC	702Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28

O Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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