N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE

■ HIGH CURRRENT POWER MOS MODULE
■ Very Low Rth JUNCTION TO CASE
■ DUAL SOURCE CONTACTS
■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY
■ ISOLATED CASE (2500V RMS)
■ EASY TO MOUNT
■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5ns)
■ AVALANCHE RUGGENDNESS TECHNOLOGY (SEE IRFP150 FOR RATING)

industrial applications:
■ DC/DC & DC/AC CONVERTERS
■ SMPS & UPS
■ MOTOR CONTROL
■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS