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H02N60I Arkusz danych (PDF) - Hi-Sincerity Mocroelectronics

H02N60I Datasheet PDF - Hi-Sincerity Mocroelectronics
Numer części H02N60I
Pobierz  H02N60I Pobierz

Rozmiar pliku   74.96 Kbytes
Page   6 Pages
Producent  HSMC [Hi-Sincerity Mocroelectronics]
Strona internetowa  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics
Szczegółowy opis N-Channel Power Field Effect Transistor

H02N60I Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
H02N60I Datasheet PDF - Hi-Sincerity Mocroelectronics

Numer części H02N60I
Pobierz  H02N60I Click to download

Rozmiar pliku   74.96 Kbytes
Page   6 Pages
Producent  HSMC [Hi-Sincerity Mocroelectronics]
Strona internetowa  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics
Szczegółowy opis N-Channel Power Field Effect Transistor

H02N60I Arkusz danych (HTML) - Hi-Sincerity Mocroelectronics

H02N60I Datasheet HTML 1Page - Hi-Sincerity Mocroelectronics H02N60I Datasheet HTML 2Page - Hi-Sincerity Mocroelectronics H02N60I Datasheet HTML 3Page - Hi-Sincerity Mocroelectronics H02N60I Datasheet HTML 4Page - Hi-Sincerity Mocroelectronics H02N60I Datasheet HTML 5Page - Hi-Sincerity Mocroelectronics H02N60I Datasheet HTML 6Page - Hi-Sincerity Mocroelectronics

H02N60I Szczegóły Produktu

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.



Features

•Robust High Voltage Termination

•Avalanc he Energy Specified

•Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

•Diode is Characterized for Use in Bridge Circuits

•IDSS and VDS(on) Specified at Elevated Temperature




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O Hi-Sincerity Mocroelectronics


Hi-Sincerity Microelectronics is a semiconductor company based in Taiwan that designs and manufactures a wide range of analog and mixed-signal integrated circuits (ICs) for various applications. The company was founded in 1998 and has since become a leading provider of analog ICs in Asia.

Hi-Sincerity's product portfolio includes power management ICs, audio amplifiers, LED drivers, motor controllers, and other analog and mixed-signal ICs. The company's products are used in a variety of end markets, including consumer electronics, automotive, industrial, and communication systems.

One of Hi-Sincerity's strengths is its ability to develop customized solutions for customers with specific requirements. The company has a team of experienced engineers who work closely with customers to understand their needs and develop tailored solutions that meet their specifications.

In addition to its design and development capabilities, Hi-Sincerity also has strong manufacturing capabilities. The company operates a modern semiconductor fabrication facility in Taiwan that is capable of producing a wide range of analog and mixed-signal ICs using advanced process technologies.

Hi-Sincerity is committed to quality and reliability, and its products are widely recognized for their performance and reliability. The company has received numerous awards and certifications for its quality management systems and environmental management systems, including ISO 9001, ISO 14001, and IATF 16949.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.




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