UPD5702TU Arkusz danych(PDF) - California Eastern Labs

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UPD5702TU Arkusz danych (PDF) - California Eastern Labs

UPD5702TU Datasheet PDF - California Eastern Labs


Numer części	UPD5702TU

Pobierz	UPD5702TU Pobierz

Rozmiar pliku	176.33 Kbytes

Page	4 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

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Szczegółowy opis

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

UPD5702TU Datasheet (PDF)

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Pobierz Arkusz danych

UPD5702TU Datasheet PDF - California Eastern Labs


Numer części	UPD5702TU

Pobierz	UPD5702TU Click to download

Rozmiar pliku	176.33 Kbytes

Page	4 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis	NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

UPD5702TU Arkusz danych (HTML) - California Eastern Labs

UPD5702TU Datasheet HTML 1Page - California Eastern Labs

UPD5702TU Datasheet HTML 2Page - California Eastern Labs

UPD5702TU Datasheet HTML 3Page - California Eastern Labs

UPD5702TU Datasheet HTML 4Page - California Eastern Labs

UPD5702TU Szczegóły Produktu

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.

FEATURES
• Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage : VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)TI

Podobny numer części - UPD5702TU

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	UPD5702TU	231Kb / 13P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT 2003
California Eastern Labs	UPD5702TU-A	391Kb / 10P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
Renesas Technology Corp	UPD5702TU-E2	231Kb / 13P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT 2003
California Eastern Labs	UPD5702TU-E2-A	391Kb / 10P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

Podobny opis - UPD5702TU

Producent	Numer części	Arkusz danych	Szczegółowy opis
ANADIGICS, Inc	RFSP2010	75Kb / 4P	2.4-2.5 GHz Power Amplifier 05/2003
List of Unclassifed Man...	AP1091	246Kb / 7P	2.4~2.5 GHz Power Amplifier
List of Unclassifed Man...	AP1098	104Kb / 5P	2.4~2.5 GHz Power Amplifier
NEC	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
List of Unclassifed Man...	AP1093	304Kb / 7P	2.4~2.5 GHz Power Amplifier
ANADIGICS, Inc	RFSP2020	79Kb / 4P	2.4-2.5 GHz Power Amplifier 05/2003
Silicon Storage Technol...	SST12LP00	489Kb / 14P	2.4-2.5 GHz Power Amplifier
Silicon Storage Technol...	SST12LP14	226Kb / 12P	2.4 GHz Power Amplifier
California Eastern Labs	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Skyworks Solutions Inc.	SE2433T	1Mb / 13P	2.4 GHz Power Amplifier

O California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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