| Producent | Numer części | Arkusz danych | Szczegółowy opis |
TriQuint Semiconductor |
QPD1016
|
1Mb / 25P |
50 V, 500 W GaN RF Transistor
|
|
QPD1020
|
1Mb / 22P |
2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
|
|
QPD2195
|
1Mb / 12P |
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
|
Cree, Inc |
CMPA0527005F
|
1,011Kb / 12P |
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
|
Qorvo, Inc |
QPD1020
|
1Mb / 21P |
2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
|
|
QPD1016
|
1Mb / 24P |
DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor
August 17, 2018 |
|
QPD1016L
|
1Mb / 24P |
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
September 2020 |
STMicroelectronics |
RF5L08350CB4
|
1Mb / 12P |
400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
28-Sep-2021 |
WOLFSPEED, INC. |
CGHV35400F1
|
1Mb / 21P |
400 W, 2.9 - 3.5 GHz, GaN HEMT
Rev. 1.0, 2022-8-4 |
|
CMPA0527005F
|
1Mb / 12P |
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
Rev. 2.0, 2022-8-26 |
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