FEATURES
• Ultra low charge injection
(± 0.5 pC, typ. over the full analog signal range)
• Leakage current < 0.5 nA max. at 85 °C
(for DG636EQ-T1-E3)
• Low switch capacitance (Csoff, 2 pF typ.)
• Low RDS(on) - 115 Ω max.
• Fully specified with single supply operation at 3 V, 5 V and
dual supplies at ± 5 V
• Low voltage, 2.5 V CMOS/TTL compatible
• 600 MHz, - 3 dB bandwidth
• Excellent isolation and crosstalk performance
(typ. > -60 dB at 10 MHz)
• Fully specified from -40 °C to +85 °C and -40 °C to
+125 °C
• 14 pin TSSOP and 16 pin miniQFN package
(1.8 mm x 2.6 mm)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS
• High-end data acquisition
• Medical instruments
• Precision instruments
• High speed communications applications
• Automated test equipment
• Sample and hold applications

DESCRIPTION
The DG636 is an analog CMOS, dual SPDT switch,
designed to operate from a +2.7 V to +12 V single supply or
from ± 2.7 V to ± 5 V, dual supplies. The DG636 is fully
specified at +3 V, +5 V and ± 5 V. All control logic inputs
have guaranteed 2 V logic high limits when operating from
+5 V or ± 5 V supplies and 1.4 V when operating from a 3 V
supply.
The DG636 switches conduct equally well in both directions
and offer rail to rail analog signal handling. < 1 pC
low charge injection, coupled with very low switch
capacitance and leakage current makes this product ideal
for use in precision instrumentation applications. Operating
temperature range is specified from -40 °C to +125 °C. The
DG636 is available in 14 lead TSSOP and the space saving
1.8 mm x 2.6 mm miniQFN package.