| Producent | Numer części | Arkusz danych | Szczegółowy opis |
ON Semiconductor |
NTH4L020N120SC1
|
283Kb / 8P |
MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 20 m, 102 A
April, 2020 ??Rev. 2 |
|
NTH4L040N120SC1
|
282Kb / 8P |
MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A
April, 2020 ??Rev. 1 |
|
NTH4L160N120SC1
|
277Kb / 8P |
MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A
April, 2020 ??Rev. 2 |
|
NVH4L040N120SC1
|
282Kb / 8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A
April, 2020 ??Rev. 1 |
|
NVH4L160N120SC1
|
277Kb / 8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A
April, 2020 ??Rev. 2 |
|
NVH4L020N120SC1
|
283Kb / 8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L
April, 2020 ??Rev. 2 |
|
NVH4L015N065SC1
|
355Kb / 8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A
September, 2021 ??Rev. 3 |
|
NTH4L022N120M3S
|
261Kb / 9P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A
October, 2021 ??Rev. 1 |
|
NVH4L018N075SC1
|
353Kb / 8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A
September, 2021-Rev. 3 |
|
NVH4L045N065SC1
|
366Kb / 8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A
February, 2021-Rev. 0 |
Polish ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Vietnamese
Indian
Mexican
British
New Zealand
