FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast switching
and low logic level applications
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS
• Applications where a very low forward voltage is required