UGF09085P Arkusz danych(PDF) - Cree, Inc

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UGF09085P Arkusz danych (PDF) - Cree, Inc

UGF09085P Datasheet PDF - Cree, Inc


Numer części	UGF09085P

Pobierz	UGF09085P Pobierz

Rozmiar pliku	202.95 Kbytes

Page	6 Pages

Producent	CREE [Cree, Inc]

Strona internetowa	http://www.cree.com/

Logo

Szczegółowy opis

90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09085P Datasheet (PDF)

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Pobierz Arkusz danych

UGF09085P Datasheet PDF - Cree, Inc


Numer części	UGF09085P

Pobierz	UGF09085P Click to download

Rozmiar pliku	202.95 Kbytes

Page	6 Pages

Producent	CREE [Cree, Inc]

Strona internetowa	http://www.cree.com/

Logo

Szczegółowy opis	90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09085P Arkusz danych (HTML) - Cree, Inc

UGF09085P Datasheet HTML 1Page - Cree, Inc

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UGF09085P Datasheet HTML 3Page - Cree, Inc

UGF09085P Datasheet HTML 4Page - Cree, Inc

UGF09085P Datasheet HTML 5Page - Cree, Inc

UGF09085P Datasheet HTML 6Page - Cree, Inc

Podobny numer części - UGF09085P

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	UGF09030	197Kb / 7P	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Cree, Inc	UGF09030P	197Kb / 7P	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

Podobny opis - UGF09085P

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	MRF185	56Kb / 4P	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Motorola, Inc	MRF3010	106Kb / 8P	LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
List of Unclassifed Man...	UGF27025	315Kb / 7P	25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Tyco Electronics	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
PEAK electronics GmbH	AGR09045E	340Kb / 8P	45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
Tyco Electronics	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
TriQuint Semiconductor	AGR09030E	337Kb / 7P	30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
	AGR09045E	334Kb / 7P	45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
	AGR09085E	354Kb / 8P	85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
Cree, Inc	UGF09030	197Kb / 7P	30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

O Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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