Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 180W with 10 dB gain @ 1030 MHz
36 V/100 μsec - 10%
■ Plastic package
■ In compliance with the 2002/95/EC european
directive

Description
The STAP1011-180 is a common source
N-channel enhancement-mode lateral field-effect
RF power transistor. It is designed for 1030-1090
MHz avionics applications.
STAP1011-180 is mounted in STAP ST advanced
PowerSO-10RF package.
The STAP package was designed to offer high
reliability and power capability. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.