APT10M07JVFR Arkusz danych(PDF) - Advanced Power Technology

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APT10M07JVFR Arkusz danych (PDF) - Advanced Power Technology

APT10M07JVFR Datasheet PDF - Advanced Power Technology


Numer części	APT10M07JVFR

Pobierz	APT10M07JVFR Pobierz

Rozmiar pliku	121.22 Kbytes

Page	4 Pages

Producent	ADPOW [Advanced Power Technology]

Strona internetowa	http://www.advpowertech.com

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Szczegółowy opis

High Voltage N-Channel enhancement mode power MOSFET

APT10M07JVFR Datasheet (PDF)

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Pobierz Arkusz danych

APT10M07JVFR Datasheet PDF - Advanced Power Technology


Numer części	APT10M07JVFR

Pobierz	APT10M07JVFR Click to download

Rozmiar pliku	121.22 Kbytes

Page	4 Pages

Producent	ADPOW [Advanced Power Technology]

Strona internetowa	http://www.advpowertech.com

Logo

Szczegółowy opis	High Voltage N-Channel enhancement mode power MOSFET

APT10M07JVFR Arkusz danych (HTML) - Advanced Power Technology

APT10M07JVFR Datasheet HTML 1Page - Advanced Power Technology

APT10M07JVFR Datasheet HTML 2Page - Advanced Power Technology

APT10M07JVFR Datasheet HTML 3Page - Advanced Power Technology

APT10M07JVFR Datasheet HTML 4Page - Advanced Power Technology

APT10M07JVFR Szczegóły Produktu

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
• 100% Avalanche Tested
• Popular SOT-227 Package

Podobny numer części - APT10M07JVFR

Producent	Numer części	Arkusz danych	Szczegółowy opis
Advanced Power Technolo...	APT10M07JVR	73Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Podobny opis - APT10M07JVFR

Producent	Numer części	Arkusz danych	Szczegółowy opis
Seme LAB	IRF230	22Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
Advanced Power Technolo...	APL1001J	37Kb / 2P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APL501J	114Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APL501P	112Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APT1001RBN	50Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APT1004RGN	50Kb / 4P	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
	APT60M90JN	60Kb / 4P	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
IXYS Corporation	IXTU01N100	65Kb / 2P	High Voltage MOSFET N-Channel, Enhancement Mode
Advanced Power Technolo...	APT10M11B2VFR	66Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET
Advanced Power Technolo...	APT10M11JVFR	121Kb / 4P	High Voltage N-Channel enhancement mode power MOSFET

O Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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