PRODUCT DESCRIPTION
The SST39VF1601C and SST39VF1602C devices are
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured
with SST proprietary, high performance
CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39VF160xC writes (Program
or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pinouts for x16
memories.
Featuring high performance Word-Program, the
SST39VF1601C/1602C devices provide a typical
Word-Program time of 7 μsec. These devices use Toggle
Bit, Data# Polling, or the RY/BY# pin to indicate the
completion of Program operation. To protect against
inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications,
these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is
rated at greater than 100 years.
The SST39VF1601C/1602C devices are suited for
applications that require convenient and economical
updating of program, configuration, or data memory.
For all system applications, they significantly improve
performance and reliability, while lowering power
consumption. They inherently use less energy during
Erase and Program than alternative flash technologies.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies.
These devices also improve flexibility while
lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the system
software or hardware does not have to be modified
or de-rated as is necessary with alternative flash technologies,
whose Erase and Program times increase
with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39VF1601C/1602C are offered in 48-lead TSOP,
48-ball TFBGA, and 48-ball WFBGA packages. See
Figures 4-1, 4-2, and 4-3 for pin assignments.

FEATURES
• Organized as 1M x16: SST39VF1601C/1602C
• Single Voltage Read and Write Operations
- 2.7-3.6V
• Superior Reliability
- Endurance: 100,000 Cycles (Typical)
- Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5
MHz)
- Active Current: 9 mA (typical)
- Standby Current: 3 μA (typical)
- Auto Low Power Mode: 3 μA (typical)
• Hardware Block-Protection/WP# Input Pin
- Top Block-Protection (top 8 KWord)
- Bottom Block-Protection (bottom 8 KWord)
• Sector-Erase Capability
- Uniform 2 KWord sectors
• Block-Erase Capability
- Flexible block architecture; one 8-, two 4-, one
16-, and thirty one 32-KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Latched Address and Data
• Security-ID Feature
- SST: 128 bits; User: 128 words
• Fast Read Access Time:
- 70 ns
• Fast Erase and Word-Program:
- Sector-Erase Time: 18 ms (typical)
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 40 ms (typical)
- Word-Program Time: 7 μs (typical)
• Automatic Write Timing
- Internal VPP Generation
• End-of-Write Detection
- Toggle Bits
- Data# Polling
- Ready/Busy# Pin
• CMOS I/O Compatibility
• JEDEC Standard
- Flash EEPROM Pinouts and command sets
• Packages Available
- 48-lead TSOP (12mm x 20mm)
- 48-ball TFBGA (6mm x 8mm)
- 48-ball WFBGA (4mm x 6mm)
• All devices are RoHS compliant