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74HC4052D Arkusz danych (PDF) - Toshiba Semiconductor

74HC4052D Datasheet PDF - Toshiba Semiconductor
Numer części 74HC4052D
Pobierz  74HC4052D Pobierz
Rozmiar pliku   282.45 Kbytes
Page   15 Pages
Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Szczegółowy opis CMOS Digital Integrated Circuits Silicon Monolithic

74HC4052D Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
74HC4052D Datasheet PDF - Toshiba Semiconductor

Numer części 74HC4052D
Pobierz  74HC4052D Click to download

Rozmiar pliku   282.45 Kbytes
Page   15 Pages
Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Szczegółowy opis CMOS Digital Integrated Circuits Silicon Monolithic

74HC4052D Arkusz danych (HTML) - Toshiba Semiconductor


74HC4052D Szczegóły Produktu

Functional Description
74HC4051D:8-Channel Analog Multiplexer/Demultiplexer
74HC4052D:Dual 4-Channel Analog Multiplexer/Demultiplexer
General
The 74HC4051D, 74HC4052D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated
with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while
maintaining the CMOS low power dissipation.
The 74HC4051D has an 8 channel configuration and the 74HC4052D has a 4 channel × 2 configuration.
The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude
signal (VCC - VEE) can then be switched by the small logical amplitude (VCC - GND) control signal.
For example, in the case of VCC = 5 V, GND = 0 V, VEE = -5 V, signals between -5 V and +5 V can be switched
from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be
connected to circuits with low input impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) Low power dissipation: ICC = 4.0 μA (max) (VCC = 6.0 V, VEE = GND, Ta = 25 )
(3) Low ON-resistance: RON = 50 Ω (typ.) at VCC - VEE = 9 V
(4) High degree of linearity: THD = 0.02 % (typ.) at VCC - VEE = 9 V




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