1. General description
The 74AUP1G00-Q100 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes
the circuit tolerant of slower input rise and fall times. This device ensures very low static and
dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully
specified for partial power down applications using IOFF. The IOFF circuitry disables the output,
preventing the damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100
(Grade 1) and is suitable for use in automotive applications.

2. Features and benefits
• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C
• Wide supply voltage range from 0.8 V to 3.6 V
• CMOS low power dissipation
• High noise immunity
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.65 V to 1.95 V)
• JESD8-5 (2.3 Vto 2.7 V)
• JESD8C (2.7 V to 3.6 V)
• ESD protection:
• HBM JESD22-A114F Class 3A exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V
• MIL-STD-883, method 3015 Class 3A exceeds 5000 V
• Low static power consumption; ICC = 0.9 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD 78 Class II
• Overvoltage tolerant inputs to 3.6 V
• Low noise overshoot and undershoot < 10 % of VCC
• IOFF circuitry provides partial Power-down mode operation