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PBSS302PD Arkusz danych (PDF) - Nexperia B.V. All rights reserved

PBSS302PD Datasheet PDF - Nexperia B.V. All rights reserved
Numer części PBSS302PD
Pobierz  PBSS302PD Pobierz
Rozmiar pliku   264.57 Kbytes
Page   15 Pages
Producent  NEXPERIA [Nexperia B.V. All rights reserved]
Strona internetowa  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Szczegółowy opis 40 V, 4 A PNP low VCEsat (BISS) transistor

PBSS302PD Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
PBSS302PD Datasheet PDF - Nexperia B.V. All rights reserved

Numer części PBSS302PD
Pobierz  PBSS302PD Click to download

Rozmiar pliku   264.57 Kbytes
Page   15 Pages
Producent  NEXPERIA [Nexperia B.V. All rights reserved]
Strona internetowa  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Szczegółowy opis 40 V, 4 A PNP low VCEsat (BISS) transistor

PBSS302PD Arkusz danych (HTML) - Nexperia B.V. All rights reserved


PBSS302PD Szczegóły Produktu

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.

1.2 Features
* Ultra low collector-emitter saturation voltage VCEsat
* 4 A continuous collector current capability IC
* Up to 15 A peak current
* Very low collector-emitter saturation resistance
* High efficiency due to less heat generation

1.3 Applications
* Power management functions
* Charging circuits
* DC-to-DC conversion
* MOSFET gate driving
* Power switches (e.g. motors, fans)
* Thin Film Transistor (TFT) backlight inverter




Podobny numer części - PBSS302PD

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Podobny opis - PBSS302PD

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