1 W L-BAND POWER GaAs HJ-FET

DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure
• High output power : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
• High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
• High power added efficiency : 70% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
58% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
56% TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm