General Description
The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation, while the MAX11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data.

Features
♦ Dual Drain-Current-Sense Gain Amplifier
    Preset Gain of 4
    ±0.5% Accuracy for Sense Voltages Between
    75mV and 625mV (MAX11014)
♦ Common-Mode Sense-Resistor Voltage Range
    0.5V to 11V (MAX11014)
    5V to 32V (MAX11015)
♦ Low-Noise Output GATE Bias with ±10mA GATE Drive
♦ Fast Clamp and Power-On Reset
♦ 12-Bit DAC Controls MESFET GATE Voltage
♦ Internal Temperature Sensor/Dual Remote Diode Temperature Sensors
♦ Internal 12-Bit ADC Measures Temperature and Voltage
♦ Pin-Selectable Serial Interface
    3.4MHz I2C-Compatible Interface
    20MHz SPI-/MICROWIRE-Compatible Interface

Applications
    Cellular Base-Station RF MESFET Bias Controllers
    Point-to-Point or Point-to-Multipoint Links
    Industrial Process Control