CG2H40120F Arkusz danych(PDF)

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CG2H40120F Arkusz danych (PDF) - WOLFSPEED, INC.

CG2H40120F Datasheet PDF - WOLFSPEED, INC.


Numer części	CG2H40120F

Pobierz	CG2H40120F Pobierz

Rozmiar pliku	1282.8 Kbytes

Page	11 Pages

Producent	WOLFSPEED [WOLFSPEED, INC.]

Strona internetowa	https://www.wolfspeed.com/

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Szczegółowy opis

120 W, 28 V, RF Power GaN HEMT

CG2H40120F Datasheet (PDF)

Pobierz Arkusz danych


Numer części	CG2H40120F

Pobierz	CG2H40120F Click to download

Rozmiar pliku	1282.8 Kbytes

Page	11 Pages

Producent	WOLFSPEED [WOLFSPEED, INC.]

Strona internetowa	https://www.wolfspeed.com/

Logo

Szczegółowy opis	120 W, 28 V, RF Power GaN HEMT

CG2H40120F Arkusz danych (HTML) - WOLFSPEED, INC.

CG2H40120F Datasheet HTML 1Page - WOLFSPEED, INC.

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CG2H40120F Datasheet HTML 8Page - WOLFSPEED, INC.

CG2H40120F Datasheet HTML 9Page - WOLFSPEED, INC.

CG2H40120F Datasheet HTML 10Page - WOLFSPEED, INC.

CG2H40120F Szczegóły Produktu

Description
Wolfspeed’s CG2H40120 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail,
offers a general purpose, broadband solution to a variety of RF and microwave
applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth
capabilities making the CG2H40120 ideal for linear and compressed amplifier
circuits. The transistor is available in a flange and pill package.
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Test Instrumentation
Features
• Up to 2.5 GHz Operation
• 20 dB Small Signal Gain at 1.0 GHz
• 15 dB Small Signal Gain at 2.0 GHz
• 130 W Typical PSAT
• 70% Efficiency at PSAT
• 28 V Operation

Podobny numer części - CG2H40120F

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	CG2H40010	2Mb / 14P	10 W, DC - 6 GHz, RF Power GaN HEMT
WOLFSPEED, INC.	CG2H40010	1Mb / 14P	10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7
Cree, Inc	CG2H40010F	2Mb / 14P	10 W, DC - 6 GHz, RF Power GaN HEMT
	CG2H40010P	2Mb / 14P	10 W, DC - 6 GHz, RF Power GaN HEMT
	CG2H40025	1Mb / 14P	25 W, 28 V RF Power GaN HEMT

More results

Podobny opis - CG2H40120F

Producent	Numer części	Arkusz danych	Szczegółowy opis
Cree, Inc	CGH40090PP	1Mb / 13P	90 W, RF Power GaN HEMT Rev 5.0
	CGH40120F	1Mb / 13P	120 W, RF Power GaN HEMT Rev 3.0
	CGH40120P	1Mb / 12P	120 W, RF Power GaN HEMT Rev 3.0
	CG2H30070F	1Mb / 13P	70 W, 0.5??.0 GHz, 28 V, RF Power GaN HEMT
	CG2H40025	1Mb / 14P	25 W, 28 V RF Power GaN HEMT
WOLFSPEED, INC.	CG2H30070F	1Mb / 13P	70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Rev 3.1 - April 2020
	CG2H40025	3Mb / 14P	25 W, 28 V RF Power GaN HEMT Rev. 1.5, 2022-10-14
	CGH40090PP	1Mb / 13P	90 W, RF Power GaN HEMT Rev 5.2 March 2020
	CGH40120F	1Mb / 13P	120 W, RF Power GaN HEMT Rev 4.1 - March 2020
	CGH40120P	1Mb / 12P	120 W, RF Power GaN HEMT Rev. 4.0, 2022-7-14

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