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74HCT2G00DP-Q100 Arkusz danych (PDF) - Nexperia B.V. All rights reserved

74HCT2G00DP-Q100 Datasheet PDF - Nexperia B.V. All rights reserved
Numer części 74HCT2G00DP-Q100
Pobierz  74HCT2G00DP-Q100 Pobierz
Rozmiar pliku   207.74 Kbytes
Page   11 Pages
Producent  NEXPERIA [Nexperia B.V. All rights reserved]
Strona internetowa  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Szczegółowy opis Dual 2-input NAND gate

74HCT2G00DP-Q100 Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
74HCT2G00DP-Q100 Datasheet PDF - Nexperia B.V. All rights reserved

Numer części 74HCT2G00DP-Q100
Pobierz  74HCT2G00DP-Q100 Click to download

Rozmiar pliku   207.74 Kbytes
Page   11 Pages
Producent  NEXPERIA [Nexperia B.V. All rights reserved]
Strona internetowa  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Szczegółowy opis Dual 2-input NAND gate

74HCT2G00DP-Q100 Arkusz danych (HTML) - Nexperia B.V. All rights reserved


74HCT2G00DP-Q100 Szczegóły Produktu

1. General description
The 74HC2G00-Q100; 74HCT2G00-Q100 is a dual 2-input NAND gate. Inputs include clamp
diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of
VCC.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100
(Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C
• Wide supply voltage range from 2.0 V to 6.0 V
• Input levels:
• For 74HC2G00-Q100: CMOS level
• For 74HCT2G00-Q100: TTL level
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• ESD protection:
• MIL-STD-883, method 3015 exceeds 2000 V
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-A exceeds 200 V (C = 200 pF; R = 0 Ω)




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