Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.

Features
• Max Junction Temperature 175°C
• Avalanche Rated 110 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb−Free 2LI (on second level interconnection)

Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits