| Producent | Numer części | Arkusz danych | Szczegółowy opis |
Stanson Technology |
STN4488L
|
644Kb / 7P |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
|
STN4822
|
516Kb / 6P |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
|
STN9926
|
648Kb / 7P |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
|
STN9926AA
|
233Kb / 7P |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
|
STP4403
|
321Kb / 6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
|
STP4931
|
334Kb / 6P |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
|
STP9235
|
331Kb / 6P |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
|
STP9434
|
314Kb / 6P |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD... |
ACE632
|
1Mb / 11P |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
VER 1.3 |
Shenzhen Huazhimei Semi... |
HM1P10MR
|
763Kb / 5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Polish ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Vietnamese
Indian
Mexican
British
New Zealand
